Best-in-Class for Enterprise
Samsung’s all-flash solutions for heavy workloads deliver unrivalled performance, reliability and capacity without bottlenecks.
Top Solution for Diverse Applications: High Performance in a Small Form Factor
PM983 offers tremendous performance for Read-Intensive data centers by applying PCIe Gen 3, achieving 540K IOPS in Random Read and 3000 MB/s in sequential read speed. Using impressively low power in small form factors (2.5”, M.2), PM983 delivers an efficient SSD solution for mixed data workloads.
The Samsung SSD PM983 presents outstanding performance with instant responsiveness to the host system, by applying the Peripheral Component Interconnect Express (PCIe) 3.0 interface standard, as well as highly efficient Non-Volatile Memory Express (NVMe) Protocol.
The Samsung SSD PM983 delivers wide bandwidth of up to 3,000MB/s for sequential read speed and up to 1,900MB/s for sequential write speed under up to 10.6W power. With the help of Toggle 2.0 NAND Flash interface, the Samsung SSD PM983 delivers random performance of up to 540KIOPS for random 4KB read and up to 50KIOPS for random 4KB write in the sustained state.
By combining the enhanced reliability Samsung NAND Flash memory silicon with NAND Flash management technologies, the Samsung SSD PM983 delivers the extended endurance of up to 1.3 drive writes per day over 3 years, which is suitable for enterprise applications, in 2.5" form factor lineups: 960GB, 1.92TB, 3.84TB and 7.68TB.
In addition, the Samsung SSD PM983 supports Power Loss Protection (PLP). PLP solution can guarantee that data issued by the host system are written to the storage media without any loss in the event of sudden power off or sudden power failure.
User Capacity 15.36 TB* / 7.68 TB* / 3.84 TB / 1.92 TB
Physical Capacity 16 TB* / 8 TB* / 4 TB
Form Factor NG SFF
Dimension (W X L X H) 30.50 X 110.00 X 4.38 mm
Interface PCIe Gen 3 x4 @ 32 Gb/s
Sequential Read (128 KB)3 Up to 3100 MB/s
Sequential Write (128 KB)3 Up to 2000 MB/s
Random Read (4 KB, QD32) Up to 540,000 IOPS
Random Write (4 KB, QD32) Up to 50,000 IOPS
Reliability (MTBF) 2 Million Hours
Reliability (UBER) 1 sector per 1017 bits read
Endurance (DWPD) 1.3 drive write per day within 3 years
Allowable Voltage 12V ± 10%
Average Power Consumption Active Read/Write Max. 9.0/11.5W, Idle : 3.6W
Weight Max. 22g
Operating Temperature 0 - 70°C